Re: Obvious multi-core idea: (Semi-)dedicated cores and cheap communication

On 31 Jan, 17:54, n...@xxxxxxxxx wrote:
In article <c12c578c-fe99-432e-83cb-a6b570682...@xxxxxxxxxxxxxxxxxxxxxxxxxxxxx>,
Robert Myers  <rbmyers...@xxxxxxxxx> wrote:



Even 5 years ago, there were some people in the industry who were
(unreasonably) optimistic, and were expecting the process people to
pull a rabbit out of the hat. =A0I haven't heard of any holding that
view recently. =A0Yes, that's just how it seems to me, too.

Just as all the processors are being moved out to the periphery to
allow for greater heat transfer, photons will change all the rules--or
something like that.

Quite.  And replacing silicon by a diamond/unobtanium composite.
And so on and so forth.  Real soon now ....

Regards,
Nick Maclaren.

Yes how long since silicon on saphire. Since burried (n+)-layer in the
collector. Or why not burried source under channel. Why go all the way
to unobtanium? Increasing the effective electron mobility is not as
easy as it seems. GaAs MOSFET? or just too much of a pain to process
compared to SI CuK FET.

How about a bridge rectifier unpolarizing a capacitor with a zener max
charge, insert into a drive line, and driving the capacitive base of a
FET is easier. Reducion of intrinsic capacitances and inductances is
essential.

Some way of reducing the miller effect? Although the transistor will
get bigger. Trapizoid? wide source narrow drain => deep drain, deep
undercut of channel by drain? Auto-drain enhancement reduction V(GS)
conduction?? 2 extra mask process???

Dual output combine at input of next stage, to reduce switching rail
to rail conduction. Magneto constrictive hall conduction avalanche
transistor????? MCHCAT.

Anything I missed. All rights reserved, contack jackokring -at-
gmail.com


cheers jacko
.

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